E0 series SiC MOSFET power module, circuit structure is Half Bridge or H-Bridge. It integrates a high-performance SiC MOSFET chip and has a built-in temperature sensor. Especially suitable for solar inverter, DC-DC, energy storage and other applications——Package size:W34.8*L62.8*H16 mm
Model | Categories | Package | Circuit structure | Block the voltage(V) | Rated current(A) | On-resistance(mΩ) | Tjmax(℃) |
---|---|---|---|---|---|---|---|
DFS40HH12EYQ1 | SiC | E0 | H-Bridge | 1200 | - | 40 | 175 |
DFS26HH12EYQ1 | SiC | E0 | H-Bridge | 1200 | - | 26 | 175 |
DFS40HF12EYQ1 | SiC | E0 | Half Bridge | 1200 | - | 40 | 175 |
DFS26HF12EYQ1 | SiC | E0 | Half Bridge | 1200 | - | 26 | 175 |
DFS20HF12EYQ1 | SiC | E0 | Half Bridge | 1200 | - | 20 | 175 |
DFS09HF12EYR1 | SiC | E0 | Half Bridge | 1200 | - | 9 | 175 |
DFS05HF12EYR1 | SiC | E0 | Half Bridge | 1200 | - | 5.5 | 175 |