E0 series SiC MOSFET power module, circuit structure is Half Bridge or H-Bridge. It integrates a high-performance SiC MOSFET chip and has a built-in temperature sensor. Especially suitable for solar inverter, DC-DC, energy storage and other applications——Package size：W34.8*L62.8*H16 mm
| Part Number | Type | Package | Circuit Diagram | Blocking Voltage（V） | Current（A） | RDs(on)（mΩ） | Tjmax（℃） |
|---|---|---|---|---|---|---|---|
| DFS05HF12EYR1 | SiC | E0 | Half Bridge | 1200 | 150 | 5.5 | 175 |
| DFS06HF12EYC1 | SiC | E0 | Half Bridge | 1200 | 150 | 6.2 | 175 |
| DFS10HF12EYA2 | SiC | E0 | Half Bridge | 1200 | 100 | 10.1 | 175 |
| DFS36FB14EYQ1 | SiC | E0 | 3-Phase | 1400 | 25 | 36.0 | 175 |
| DFS09CU12EYQ1 | SiC | E0 | Boost | 1200 | 150 | 9 | 175 |
